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HS100 D5116A 74VHC245 100EL FJX4006R 29LV0 2SA19 12500
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 Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB817
DESCRIPTION With TO-3PN package Complement to type 2SD1047 APPLICATIONS 140V/12A AF 60W output applications
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION
Absolute maximum ratings(Tc=25ae )
SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg
Collector-base voltage

PARAMETER
CONDITIONS
ANG INCH
Emitter-base voltage Collector current (DC) Collector current-peak Collector power dissipation Junction temperature Storage temperature
Collector-emitter voltage
EMIC ES
Open base Open collector TC=25ae
Open emitter
DUC ON
VALUE -160
TOR
UNIT V V V A A W ae ae
-140 -6 -12 -15 100 150
-40~150
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=-50mA ;IB=0 IC=-5mA ;IE=0 IE=-5mA ;IC=0 IC=-5A ;IB=-0.5A IC=-1A;VCE=-5V VCB=-80V; IE=0 VEB=-4V; IC=0 IC=-1A ; VCE=-5V IC=-6A ; VCE=-5V IC=-1A ; VCE=-5V 60 20 MIN -140 -160 -6 -1.1 TYP.
2SB817
SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBE ICBO IEBO hFE-1 hFE-2 fT COB
MAX
UNIT V V V V
-1.5 -0.1 -0.1 200
V mA mA
Transition frequency

Collector output capacitance
Switching times ton tstg tf
Turn-on time Storage time Fall time
HAN INC
SEM GE
IE=0;f=1MHz;VCB=10V
OND IC
TOR UC
15 300 0.25 1.61 0.53
MHz pF
|I |I |I
s s s
IC=-1.0A IB1=-IB2=-0.1A
hFE-1 Classifications D 60-120 E 100-200
2
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SB817
SEM GE
HAN INC
OND IC
TOR UC
Fig.2 outline dimensions
3
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB817
SEM GE
HAN INC
OND IC
TOR UC
4


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